Publications

Dynamical Properties of Optically Sensitive Metal-Insulator-Semiconductor Nonvolatile Memories Based on Pt Nanoparticles
R. Padmanabhan, O. Eyal, B. Meyler, S. Yofis, G. Atiya, W. D. Kaplan, V. Mikhelashvili, and G. Eisenstein
IEEE Trans. Nanotechnol. 15 (3) 492-498 (2016)
Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack
V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, G. Atiya, Z. Cohen-Hyams, S. Weindling, G. Ankonina, J. Salzman, W. D. Kaplan, and G. Eisenstein
J. Appl. Phys. 118 (13) 134504:1-11 (2015)
Multi-functional optically sensitive metal-insulator-semiconductor devices based on Pt nanoparticles fabricated in-situ with a dielectric stack using atomic layer deposition
R. Padmanabhan, V. Mikhelashvili, B. Meyler, S. Yofis, S. Weindling, J. Salzman, and G. Eisenstein
Proc. 15th IEEE International Conference on Nanotechnology (IEEE NANO) 1235-1238 (2015)
High-performance stacked TiO2-ZrO2 and Si-doped ZrO2 metal-insulator-metal capacitors
R. Padmanabhan, N. Bhat, S. Mohan, Y. Morozumi, and S. Kaushal
Proc. Int. Conf. IC Design Technol. 1-4 (2014)
Room temperature-processed TiO2 MIM capacitors for DRAM applications
R. Padmanabhan, N. Bhat, and S. Mohan
Proc. 17th Int. Workshop Phys. Semiconductor Devices, Environ. Sci. Eng. 37-39 (2014)
High-performance MIM capacitors based on TiO2/ZrO2/TiO2 and AlO-doped TiO2/ZrO2/TiO2 dielectric stacks for DRAM applications
R. Padmanabhan, N. Bhat, S. Mohan, Y. Morozumi, and S. Kaushal
Proc. Mater. Res. Soc. Symp. 1561 (2013)
Performance and Reliability of Gd2O3 and Stacked Gd2O3-Eu2O3 Metal-Insulator-Metal Capacitors
R. Padmanabhan, N. Bhat, and S. Mohan
IEEE Trans. Electron Devices 60 (5) 1523-1528 (2013)
High-density metal-insulator-metal capacitors using Gd2O3-based dielectrics
R. Padmanabhan, N. Bhat, S. Mohan
Proc. IEEE Int. Conf. Emerging Electron. 1-4 (2012)
High-performance metal–insulator–metal capacitors using europium oxide as dielectric
R. Padmanabhan, N. Bhat, and S. Mohan
IEEE Trans. Electron Devices 59 (5) 1364-1370 (2012)